The motion of charge carriers, across the potential barrier, in a forward and reverse biased p–n junction, is due, respectively, to
(1) Drift, diffusion
(2) Diffusion, drift
(3) Drift in both cases
(4) Diffusion in both cases
Correct option: (2) Diffusion, drift
Explanation:
The charge carriers, diffuse across the junction during the forward biasing of a p–n junction. During reverse biasing, the motion of charge carriers, is due to their drift.