The doping concentrations on the p-side and n-side of a silicon diode are 1 x 1016cm-3 and 1 x 1017cm−3, respectively. A forward bias of 0.3 V is applied to the diode. At T = 300K, the intrinsic carrier concentration of silicon ni = 1.5 x 1010cm-3 and kT/q = 26mV. The electron concentration at the edge of the depletion region on the p-side is
(A) 2.3 x 109cm-3
(B) 1 x 1016cm-3
(C) 1 x 1017cm-3
(D) 2.25 x 106cm-3
